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Электронный компонент: KTA1962

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1996. 10. 9
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1962
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 1
POWER AMPLIFIER APPLICATIONS.
FEATURES
High Collector Voltage : V
CEO
=-230V(Min.)
Complementary to KTC5242.
Recommended for 80W High Fidelity Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR
3. EMITTER
TO-3P(N)
C
G
L
K
H
A
D
B
E
F
I
d
P
P
T
M
J
Q
1
2
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C
20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification R:55 110 , O:80 160
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-230
V
Collector-Emitter Voltage
V
CEO
-230
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-15
A
Base Current
I
B
-1.5
A
Collector Power Dissipation (Tc=25 )
P
C
130
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-230V, I
E
=0
-
-
-5.0
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-5.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-50mA, I
B
=0
-230
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-5V, I
C
=-1A
55
-
160
h
FE
(2)
V
CE
=-5V, I
C
=-7A
35
60
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-8A, I
B
=-0.8A
-
-1.5
-3.0
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-7A
-
-1.0
-1.5
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-1A
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
360
-
pF
1996. 10. 9
2/3
KTA1962
Revision No : 1
COLLECTOR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
C
COLLECTOR CURRENT I (A)
-0.01
-0.03
-0.1
-0.3
FE
DC CURRENT GAIN h
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (A)
-0.01
-0.03
-0.1
-0.3
C
BE(sat)
-0.03
V - I
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (A)
COLLECTOR CURRENT I (A)
1
-0.03
-0.01
100
10
-0.01
-0.03
-0.3
-0.1
C
f - I
-0.1
-0.3
C
CE(sat)
0.01
V - I
BASE-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (A)
0
0
C
BE
I - V
C
BE
-2
-4
-6
-8
-10
-12
-14
-16
-2
-4
-6
-8
-10
-12
COMMON
EMITTER
Tc=25 C
I =-20mA
B
-300
-200
-140
-100
-80
-60
-40
-0.4
-0.8
-1.2
-1.6
-2.0
-2
-4
-6
-8
-10
-12
COMMON EMITTER
V =-5V
CE
Tc
=100 C
Tc
=25
C
Tc
=-25
C
FE
C
-1
-3
-10 -20
3
10
30
50
100
300
500
1k
COMMON EMITTER
V =-5V
CE
Tc=100 C
Tc=25 C
Tc=-25 C
CE(sat)
C
VOLTAGE V (V)
-1
-3
-10
-20
0.03
0.05
0.1
0.3
0.5
1
3
COMMON EMITTER
I /I =10
C B
Tc=100 C
Tc=25 C
Tc=-25 C
BE(sat)
C
VOLTAGE V (V)
-1
-3
-10 -20
-0.1
-0.3
-1
-3
-10
COMMON EMITTER
I /I =10
C B
Tc=-25 C
Tc=25 C
Tc=100 C
T
C
-1
-3
-10
3
30
5
50
T
TRANSITION FREQUENCY f (MHz)
COMMON EMITTER
V =-5V
Tc=25 C
CE
1996. 10. 9
3/3
KTA1962
Revision No : 1
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
TRANSIENT THERMAL RESISTANCE
th
1
0.1
0.01
0.001
PULSE WIDTH t (s)
w
r - t
P (W)
40
80
120
160
200
40
80
120
160
th
w
r ( C/W)
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
INFINITE HEAT SINK
NO HEAT SINK
1
2
10
100
1k
0.01
0.1
1
10
50
1
2
Tc=Ta
INFINITE HEAT SINK